Process stabilization during reactive high power impulse magnetron sputtering of Ce/Gd target

S. V. Rabotkin, V. O. Oskirko, I. V. Ionov, V. A. Semenov, A. V. Shipilova, A. A. Solovyev

    Результат исследований: Материалы для журналарецензирование

    2 Цитирования (Scopus)


    In this study, a simple approach to stabilize reactive high power impulse magnetron sputtering process in the transition zone between the metallic and oxide modes was investigated. The method is based on the use of peak current value as feedback and control signal. It was shown that the change in the state of the target surface causes almost instantaneous change in the amplitude and shape of the current pulses. To stabilize the deposition process, the pulse frequency was regulated to maintain a constant maximum discharge current. The hysteresis behavior and the variations of the pulse current waveforms over a wide range of O 2 flow rates and pulse frequencies during a reactive HiPIMS deposition of gadolinia-doped ceria (GDC) thin films in an Ar-O 2 atmosphere were examined. Stable process conditions were maintained at the O 2 flow from 0.9 to 3.9 sccm by adjustment of the pulse frequency from 1.45 to 2.9 kHz. GDC films deposited using peak current regulation exhibited a stable stoichiometry and high deposition rate in comparison with films obtained without process stabilization.

    Язык оригиналаАнглийский
    Номер статьи032078
    ЖурналJournal of Physics: Conference Series
    Номер выпуска3
    СостояниеОпубликовано - 27 ноя 2018
    Событие6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 - Tomsk, Российская Федерация
    Продолжительность: 16 сен 201822 сен 2018

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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