Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping

N. A. Antropov, E. Yu Boyarko, E. K. Gorbunov, K. V. Grigorjev, Yu Yu Kryuchkov, O. G. Chernikov, I. P. Chernov

Отделение экспериментальной физики

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.

Язык оригинала	Английский
Страницы (с-по)	1496-1498
Число страниц	3
Журнал	Bulletin of the Russian Academy of Sciences: Physics
Том	73
Номер выпуска	11
DOI	https://doi.org/10.3103/S1062873809110161
Состояние	Опубликовано - ноя 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3103/S1062873809110161

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Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping. / Antropov, N. A.; Boyarko, E. Yu; Gorbunov, E. K.; Grigorjev, K. V.; Kryuchkov, Yu Yu; Chernikov, O. G.; Chernov, I. P.

В: Bulletin of the Russian Academy of Sciences: Physics, Том 73, № 11, 11.2009, стр. 1496-1498.

Результат исследований: Материалы для журнала › Статья › рецензирование

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author = "Antropov, {N. A.} and Boyarko, {E. Yu} and Gorbunov, {E. K.} and Grigorjev, {K. V.} and Kryuchkov, {Yu Yu} and Chernikov, {O. G.} and Chernov, {I. P.}",

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AU - Kryuchkov, Yu Yu

AU - Chernikov, O. G.

AU - Chernov, I. P.

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