Выдержка
The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 1496-1498 |
| Число страниц | 3 |
| Журнал | Bulletin of the Russian Academy of Sciences: Physics |
| Том | 73 |
| Номер выпуска | 11 |
| DOI | |
| Состояние | Опубликовано - ноя 2009 |
Отпечаток
ASJC Scopus subject areas
- Physics and Astronomy(all)
Цитировать
Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping. / Antropov, N. A.; Boyarko, E. Yu; Gorbunov, E. K.; Grigorjev, K. V.; Kryuchkov, Yu Yu; Chernikov, O. G.; Chernov, I. P.
В: Bulletin of the Russian Academy of Sciences: Physics, Том 73, № 11, 11.2009, стр. 1496-1498.Результат исследований: Материалы для журнала › Статья
}
TY - JOUR
T1 - Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping
AU - Antropov, N. A.
AU - Boyarko, E. Yu
AU - Gorbunov, E. K.
AU - Grigorjev, K. V.
AU - Kryuchkov, Yu Yu
AU - Chernikov, O. G.
AU - Chernov, I. P.
PY - 2009/11
Y1 - 2009/11
N2 - The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.
AB - The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.
UR - http://www.scopus.com/inward/record.url?scp=76849085842&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=76849085842&partnerID=8YFLogxK
U2 - 10.3103/S1062873809110161
DO - 10.3103/S1062873809110161
M3 - Article
AN - SCOPUS:76849085842
VL - 73
SP - 1496
EP - 1498
JO - Bulletin of the Russian Academy of Sciences: Physics
JF - Bulletin of the Russian Academy of Sciences: Physics
SN - 1062-8738
IS - 11
ER -