Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping

N. A. Antropov, E. Yu Boyarko, E. K. Gorbunov, K. V. Grigorjev, Yu Yu Kryuchkov, O. G. Chernikov, I. P. Chernov

Результат исследований: Материалы для журналаСтатьярецензирование

Аннотация

The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.

Язык оригиналаАнглийский
Страницы (с-по)1496-1498
Число страниц3
ЖурналBulletin of the Russian Academy of Sciences: Physics
Том73
Номер выпуска11
DOI
СостояниеОпубликовано - ноя 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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