Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering

Результат исследований: Материалы для типов конференцийДокумент

Выдержка

The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

Язык оригиналаАнглийский
Страницы1116-1121
Число страниц6
СостояниеОпубликовано - 1 дек 1997
СобытиеProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA
Продолжительность: 29 июн 19972 июл 1997

Другое

ДругоеProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2)
ГородBaltimore, MD, USA
Период29.6.972.7.97

Отпечаток

Rutherford backscattering spectroscopy
Ion beams
Diodes
Spectroscopy
X rays
Ions
Fluxes
Charge coupled devices
Ion implantation
Industrial applications
Particle accelerators
Magnets
Surface treatment
Crystals
Electric potential
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Цитировать

Ryzhkov, V. A. (1997). Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. 1116-1121. Документ представлен на Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. / Ryzhkov, Vladislav A.

1997. 1116-1121 Документ представлен на Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Результат исследований: Материалы для типов конференцийДокумент

Ryzhkov VA. Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. 1997. Документ представлен на Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .
Ryzhkov, Vladislav A. / Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. Документ представлен на Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .6 стр.
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abstract = "The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.",
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