POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Отделение математики и информатики

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Язык оригинала	Английский
Страницы (с-по)	145-151
Число страниц	7
Журнал	Physica Status Solidi (A) Applied Research
Том	71
Номер выпуска	1
Состояние	Опубликовано - мая 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Другие файлы и ссылки

Fingerprint Подробные сведения о темах исследования «POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{ae2bce2a09b841d0aefde125c3be9cde,

title = "POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.",

abstract = "The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.",

author = "Pogrebnyak, {A. D.} and Kuzminikh, {V. A.} and Arefev, {K. P.}",

year = "1982",

month = may,

language = "English",

volume = "71",

pages = "145--151",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

AU - Pogrebnyak, A. D.

AU - Kuzminikh, V. A.

AU - Arefev, K. P.

PY - 1982/5

Y1 - 1982/5

N2 - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

AB - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

UR - http://www.scopus.com/inward/record.url?scp=0020136820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020136820&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020136820

VL - 71

SP - 145

EP - 151

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -