POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Результат исследований: Материалы для журнала › Статья

6 Цитирования (Scopus)

Выдержка

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Язык оригиналаАнглийский
Страницы (с-по)145-151
Число страниц7
ЖурналPhysica Status Solidi (A) Applied Research
Том71
Номер выпуска1
СостояниеОпубликовано - мая 1982

Отпечаток

Positron annihilation
Angular distribution
Positrons
positron annihilation
Metal foil
foils
positrons
emitters
angular distribution
Photons
Spectroscopy
Semiconductor materials
photons
profiles
spectroscopy
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. / Pogrebnyak, A. D.; Kuzminikh, V. A.; Arefev, K. P.

В: Physica Status Solidi (A) Applied Research, Том 71, № 1, 05.1982, стр. 145-151.

Результат исследований: Материалы для журнала › Статья

Pogrebnyak, AD, Kuzminikh, VA & Arefev, KP 1982, 'POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.', Physica Status Solidi (A) Applied Research, том. 71, № 1, стр. 145-151.
Pogrebnyak AD, Kuzminikh VA, Arefev KP. POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. Physica Status Solidi (A) Applied Research. 1982 Май;71(1):145-151.
Pogrebnyak, A. D. ; Kuzminikh, V. A. ; Arefev, K. P. / POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. В: Physica Status Solidi (A) Applied Research. 1982 ; Том 71, № 1. стр. 145-151.
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