Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журналаСтатьярецензирование

Аннотация

New experimental data on planar channeling of 255 MeV electrons in a 0.74 μm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

Язык оригиналаАнглийский
Номер статьи012036
ЖурналJournal of Physics: Conference Series
Том732
Номер выпуска1
DOI
СостояниеОпубликовано - 3 авг 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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