Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions

V. Kaladzhyan, P. P. Aseev, S. N. Artemenko

Результат исследований: Материалы для журналаСтатья

26 Цитирования (Scopus)

Выдержка

We study theoretically the 2D HgTe/CdTe quantum well topological insulator illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force in the conductor, which is proportional to the photocurrent.

Язык оригиналаАнглийский
Номер статьи155424
ЖурналPhysical Review B - Condensed Matter and Materials Physics
Том92
Номер выпуска15
DOI
СостояниеОпубликовано - 20 окт 2015

Отпечаток

Optical transitions
Photocurrents
optical transition
photocurrents
insulators
conductors
Electromotive force
electromotive forces
Light polarization
Fermi level
Conduction bands
polarized light
electric dipoles
Semiconductor quantum wells
tunnels
Tunnels
conduction bands
asymmetry
quantum wells
occurrences

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Цитировать

Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions. / Kaladzhyan, V.; Aseev, P. P.; Artemenko, S. N.

В: Physical Review B - Condensed Matter and Materials Physics, Том 92, № 15, 155424, 20.10.2015.

Результат исследований: Материалы для журналаСтатья

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