Photoelectron emission from semiconductors with low valence band dispersion

V. V. Konev, V. A. Chaldyshev

    Результат исследований: Материалы для журналаСтатья

    Выдержка

    In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

    Язык оригиналаАнглийский
    Страницы (с-по)351-354
    Число страниц4
    ЖурналSoviet Physics Journal
    Том25
    Номер выпуска4
    DOI
    СостояниеОпубликовано - апр 1982

    Отпечаток

    Quantum yield
    Photoelectrons
    Valence bands
    photoelectrons
    Semiconductor materials
    valence
    Electron scattering
    electron scattering
    Scattering
    scattering

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Engineering(all)

    Цитировать

    Photoelectron emission from semiconductors with low valence band dispersion. / Konev, V. V.; Chaldyshev, V. A.

    В: Soviet Physics Journal, Том 25, № 4, 04.1982, стр. 351-354.

    Результат исследований: Материалы для журналаСтатья

    Konev, V. V. ; Chaldyshev, V. A. / Photoelectron emission from semiconductors with low valence band dispersion. В: Soviet Physics Journal. 1982 ; Том 25, № 4. стр. 351-354.
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