Photo- and radiation-stimulated processes in CsI(Tl) crystals

L. Trefilova, B. Grinyov, V. Alekseev, A. Mitichkin, V. Yu Yakovlev, A. Meleshko

Результат исследований: Материалы для журналаСтатья

7 Цитирования (Scopus)

Выдержка

The process of radiation-chemical coloration of CsI(Tl) crystals with different carbonate ion contamination has been studied. The presence of carbonate in the CsI(Tl) crystals deteriorates their photo- and radiation stability. Possible reasons for the charge carrier derealization in CsI(Tl) crystals under exposure to daylight and a role of oxygen-containing impurities in the formation of stable radiation defects have been established. A model of the hole activator color center is suggested. According to the model, the Tl2+ vc - center is a Tl2+ hole activator center perturbed by a cation vacancy. The electron color centers Tl0va + are stabilized not only by the hole color centers of Tl2+ vc - and I 3 -, but also by the molecular anions of HCO 3 - and CO3 - formed as a result of the photo- and radio-chemical transformation of CO3 2- and OH- ions.

Язык оригиналаАнглийский
Номер статьи4545222
Страницы (с-по)1263-1269
Число страниц7
ЖурналIEEE Transactions on Nuclear Science
Том55
Номер выпуска3
DOI
СостояниеОпубликовано - июн 2008

Отпечаток

Color centers
color centers
Radiation
Crystals
Carbonates
carbonates
radiation
crystals
Ions
Charge carriers
Vacancies
charge carriers
ions
contamination
Contamination
Negative ions
Positive ions
Impurities
anions
color

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Цитировать

Photo- and radiation-stimulated processes in CsI(Tl) crystals. / Trefilova, L.; Grinyov, B.; Alekseev, V.; Mitichkin, A.; Yakovlev, V. Yu; Meleshko, A.

В: IEEE Transactions on Nuclear Science, Том 55, № 3, 4545222, 06.2008, стр. 1263-1269.

Результат исследований: Материалы для журналаСтатья

Trefilova, L, Grinyov, B, Alekseev, V, Mitichkin, A, Yakovlev, VY & Meleshko, A 2008, 'Photo- and radiation-stimulated processes in CsI(Tl) crystals', IEEE Transactions on Nuclear Science, том. 55, № 3, 4545222, стр. 1263-1269. https://doi.org/10.1109/TNS.2008.924055
Trefilova, L. ; Grinyov, B. ; Alekseev, V. ; Mitichkin, A. ; Yakovlev, V. Yu ; Meleshko, A. / Photo- and radiation-stimulated processes in CsI(Tl) crystals. В: IEEE Transactions on Nuclear Science. 2008 ; Том 55, № 3. стр. 1263-1269.
@article{1724bb2f55564b6e9669dfe800ebca29,
title = "Photo- and radiation-stimulated processes in CsI(Tl) crystals",
abstract = "The process of radiation-chemical coloration of CsI(Tl) crystals with different carbonate ion contamination has been studied. The presence of carbonate in the CsI(Tl) crystals deteriorates their photo- and radiation stability. Possible reasons for the charge carrier derealization in CsI(Tl) crystals under exposure to daylight and a role of oxygen-containing impurities in the formation of stable radiation defects have been established. A model of the hole activator color center is suggested. According to the model, the Tl2+ vc - center is a Tl2+ hole activator center perturbed by a cation vacancy. The electron color centers Tl0va + are stabilized not only by the hole color centers of Tl2+ vc - and I 3 -, but also by the molecular anions of HCO 3 - and CO3 - formed as a result of the photo- and radio-chemical transformation of CO3 2- and OH- ions.",
keywords = "Cesium compounds, Infrared spectroscopy, Photochromism, Radiation effects",
author = "L. Trefilova and B. Grinyov and V. Alekseev and A. Mitichkin and Yakovlev, {V. Yu} and A. Meleshko",
year = "2008",
month = "6",
doi = "10.1109/TNS.2008.924055",
language = "English",
volume = "55",
pages = "1263--1269",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - Photo- and radiation-stimulated processes in CsI(Tl) crystals

AU - Trefilova, L.

AU - Grinyov, B.

AU - Alekseev, V.

AU - Mitichkin, A.

AU - Yakovlev, V. Yu

AU - Meleshko, A.

PY - 2008/6

Y1 - 2008/6

N2 - The process of radiation-chemical coloration of CsI(Tl) crystals with different carbonate ion contamination has been studied. The presence of carbonate in the CsI(Tl) crystals deteriorates their photo- and radiation stability. Possible reasons for the charge carrier derealization in CsI(Tl) crystals under exposure to daylight and a role of oxygen-containing impurities in the formation of stable radiation defects have been established. A model of the hole activator color center is suggested. According to the model, the Tl2+ vc - center is a Tl2+ hole activator center perturbed by a cation vacancy. The electron color centers Tl0va + are stabilized not only by the hole color centers of Tl2+ vc - and I 3 -, but also by the molecular anions of HCO 3 - and CO3 - formed as a result of the photo- and radio-chemical transformation of CO3 2- and OH- ions.

AB - The process of radiation-chemical coloration of CsI(Tl) crystals with different carbonate ion contamination has been studied. The presence of carbonate in the CsI(Tl) crystals deteriorates their photo- and radiation stability. Possible reasons for the charge carrier derealization in CsI(Tl) crystals under exposure to daylight and a role of oxygen-containing impurities in the formation of stable radiation defects have been established. A model of the hole activator color center is suggested. According to the model, the Tl2+ vc - center is a Tl2+ hole activator center perturbed by a cation vacancy. The electron color centers Tl0va + are stabilized not only by the hole color centers of Tl2+ vc - and I 3 -, but also by the molecular anions of HCO 3 - and CO3 - formed as a result of the photo- and radio-chemical transformation of CO3 2- and OH- ions.

KW - Cesium compounds

KW - Infrared spectroscopy

KW - Photochromism

KW - Radiation effects

UR - http://www.scopus.com/inward/record.url?scp=45849114434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45849114434&partnerID=8YFLogxK

U2 - 10.1109/TNS.2008.924055

DO - 10.1109/TNS.2008.924055

M3 - Article

AN - SCOPUS:45849114434

VL - 55

SP - 1263

EP - 1269

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 3

M1 - 4545222

ER -