Peculiarities of angular distribution of electrons at Si <100> channeling

O. V. Bogdanov, Yu L. Pivovarov, Y. Takabayashi, T. A. Tukhfatullin

Результат исследований: Материалы для журналаСтатья

10 Цитирования (Scopus)

Аннотация

The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".

Язык оригиналаАнглийский
Номер статьи012030
ЖурналJournal of Physics: Conference Series
Том357
Номер выпуска1
DOI
СостояниеОпубликовано - 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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