Аннотация
The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".
| Язык оригинала | Английский |
|---|---|
| Номер статьи | 012030 |
| Журнал | Journal of Physics: Conference Series |
| Том | 357 |
| Номер выпуска | 1 |
| DOI | |
| Состояние | Опубликовано - 2012 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Цитировать
Bogdanov, O. V., Pivovarov, Y. L., Takabayashi, Y., & Tukhfatullin, T. A. (2012). Peculiarities of angular distribution of electrons at Si <100> channeling. Journal of Physics: Conference Series, 357(1), [012030]. https://doi.org/10.1088/1742-6596/357/1/012030