Peculiarities of angular distribution of electrons at Si <100> channeling

O. V. Bogdanov, Yu L. Pivovarov, Y. Takabayashi, T. A. Tukhfatullin

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".

Язык оригинала	Английский
Номер статьи	012030
Журнал	Journal of Physics: Conference Series
Том	357
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/357/1/012030
Состояние	Опубликовано - 2012

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1088/1742-6596/357/1/012030

Другие файлы и ссылки

Fingerprint Подробные сведения о темах исследования «Peculiarities of angular distribution of electrons at Si <100> channeling». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{09de4f5d8bd74741840b0420940eee35,

title = "Peculiarities of angular distribution of electrons at Si <100> channeling",

abstract = "The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called {"}doughnut scattering{"}.",

author = "Bogdanov, {O. V.} and Pivovarov, {Yu L.} and Y. Takabayashi and Tukhfatullin, {T. A.}",

year = "2012",

doi = "10.1088/1742-6596/357/1/012030",

language = "English",

volume = "357",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Peculiarities of angular distribution of electrons at Si <100> channeling

AU - Bogdanov, O. V.

AU - Pivovarov, Yu L.

AU - Takabayashi, Y.

AU - Tukhfatullin, T. A.

PY - 2012

Y1 - 2012

N2 - The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".

AB - The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".

UR - http://www.scopus.com/inward/record.url?scp=84862089667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862089667&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/357/1/012030

DO - 10.1088/1742-6596/357/1/012030

M3 - Article

AN - SCOPUS:84862089667

VL - 357

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012030

ER -