The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.
|Название основной публикации||Sov Phys Semicond|
|Состояние||Опубликовано - фев 1974|
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