ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

A. Ya Bobudaev, S. A. Vorob'ev, V. V. Kaplin, Valentina Victorovna Sokhoreva, Yu A. Timoshnikov, I. A. Tsekhanovskii

Результат исследований: Материалы для книги/типы отчетовГлава

Аннотация

The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

Язык оригиналаАнглийский
Название основной публикацииSov Phys Semicond
Том7
Издание8
СостояниеОпубликовано - фев 1974

ASJC Scopus subject areas

  • Engineering(all)

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  • Цитировать

    Bobudaev, A. Y., Vorob'ev, S. A., Kaplin, V. V., Sokhoreva, V. V., Timoshnikov, Y. A., & Tsekhanovskii, I. A. (1974). ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS. В Sov Phys Semicond (8 ред., Том 7)