Optimization of the driver of gan power transistors through measurement of their thermal behavior

Lionel Hoffmann, Cyrille Gautier, Stephane Lefebvre, Francois Costa

Результат исследований: Материалы для журналаСтатья

25 Цитирования (Scopus)

Аннотация

GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency. At least, we conclude on good practices regarding the drive of these components.

Язык оригиналаАнглийский
Номер статьи6576880
Страницы (с-по)2359-2366
Число страниц8
ЖурналIEEE Transactions on Power Electronics
Том29
Номер выпуска5
DOI
СостояниеОпубликовано - 1 мая 2014
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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