The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.
|Журнал||Soviet physics. Semiconductors|
|Состояние||Опубликовано - июн 1979|
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