On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix

A. R. Mkrtchyan, Al G. Alexanyan, K. S. Aramyan, A. A. Alexanyan

Результат исследований: Материалы для журналаСтатья

Выдержка

The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

Язык оригиналаАнглийский
Страницы (с-по)174-180
Число страниц7
ЖурналJournal of Contemporary Physics
Том51
Номер выпуска2
DOI
СостояниеОпубликовано - 1 апр 2016
Опубликовано для внешнего пользованияДа

Отпечаток

optical transition
quantum dots
matrices
oscillator strengths
excitons
luminescence
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix. / Mkrtchyan, A. R.; Alexanyan, Al G.; Aramyan, K. S.; Alexanyan, A. A.

В: Journal of Contemporary Physics, Том 51, № 2, 01.04.2016, стр. 174-180.

Результат исследований: Материалы для журналаСтатья

Mkrtchyan, A. R. ; Alexanyan, Al G. ; Aramyan, K. S. ; Alexanyan, A. A. / On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix. В: Journal of Contemporary Physics. 2016 ; Том 51, № 2. стр. 174-180.
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