A detailed experimental and theoretical investigation was made of the orientation dependences of the angular distributions of electrons with a total energy of 5. 6 Mev after transmission by a silicon crystal of thickness 2. 0 mu . Bound molecular states were observed for fast electrons undergoing planar channeling in the fields of (111) atomic planes. A relationship was established between the processes of electron channeling and diffraction in the lattice.
|Журнал||Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela)|
|Состояние||Опубликовано - июл 1984|
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