Numerical modeling of temperature fields in the elements and units of electronic systems

Результат исследований: Материалы для журналаСтатья

9 Цитирования (Scopus)

Выдержка

Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.

Язык оригиналаАнглийский
Страницы (с-по)312-319
Число страниц8
ЖурналRussian Microelectronics
Том38
Номер выпуска5
DOI
СостояниеОпубликовано - 1 сен 2009

Отпечаток

confining
Temperature distribution
temperature distribution
heat transfer
Heat transfer
electronic equipment
air flow
energy sources
heat sources
electronics
Electronic equipment
transistors
velocity distribution
heat
Crystals
Air
crystals
Hot Temperature
Power transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Цитировать

Numerical modeling of temperature fields in the elements and units of electronic systems. / Kuznetsov, G. V.; Sheremet, M. A.

В: Russian Microelectronics, Том 38, № 5, 01.09.2009, стр. 312-319.

Результат исследований: Материалы для журналаСтатья

@article{bc50b927460f4a349efc697a48809d35,
title = "Numerical modeling of temperature fields in the elements and units of electronic systems",
abstract = "Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.",
author = "Kuznetsov, {G. V.} and Sheremet, {M. A.}",
year = "2009",
month = "9",
day = "1",
doi = "10.1134/S1063739709050035",
language = "English",
volume = "38",
pages = "312--319",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "5",

}

TY - JOUR

T1 - Numerical modeling of temperature fields in the elements and units of electronic systems

AU - Kuznetsov, G. V.

AU - Sheremet, M. A.

PY - 2009/9/1

Y1 - 2009/9/1

N2 - Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.

AB - Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=72449197685&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72449197685&partnerID=8YFLogxK

U2 - 10.1134/S1063739709050035

DO - 10.1134/S1063739709050035

M3 - Article

AN - SCOPUS:72449197685

VL - 38

SP - 312

EP - 319

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 5

ER -