Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

Valery A. Varlachev, Evgeny G. Emets, Ivan I. Lebedev, Daniil E. Zolotykh

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

Язык оригиналаАнглийский
Название основной публикации2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings
ИздательInstitute of Electrical and Electronics Engineers Inc.
Страницы182-187
Число страниц6
ISBN (электронное издание)9781538670545
DOI
СостояниеОпубликовано - 26 ноя 2018
Событие14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Novosibirsk, Российская Федерация
Продолжительность: 2 окт 20186 окт 2018

Конференция

Конференция14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018
СтранаРоссийская Федерация
ГородNovosibirsk
Период2.10.186.10.18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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