New investigation possibilities on forward biased power devices using cross sections

T. Kociniewski, J. Moussodji, Z. Khatir, M. Berkani, S. Lefebvre, S. Azzopardi

Результат исследований: Материалы для журналаСтатьярецензирование

6 Цитирования (Scopus)

Аннотация

For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V-200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.

Язык оригиналаАнглийский
Номер статьи6151010
Страницы (с-по)576-578
Число страниц3
ЖурналIEEE Electron Device Letters
Том33
Номер выпуска4
DOI
СостояниеОпубликовано - 1 апр 2012
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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