New features of diffracted channeling radiation from electrons in Si and Lif crystals

K. B. Korotchenko, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследования: Материалы для журнала › Статья

Аннотация

It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect [5-7].

Язык оригинала	Английский
Страницы (с... по...)	157-164
Количество страниц	8
Журнал	International Journal of Modern Physics A
Том	25
Номер выпуска	SUPPL. 1
DOI	https://doi.org/10.1142/S0217751X10050007
Статус публикации	Опубликовано - 1 июн 2010

Fingerprint

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Nuclear and High Energy Physics
Astronomy and Astrophysics

Цитировать

Korotchenko, K. B., Pivovarov, Y. L., & Tukhfatullin, T. A. (2010). New features of diffracted channeling radiation from electrons in Si and Lif crystals. International Journal of Modern Physics A, 25(SUPPL. 1), 157-164. https://doi.org/10.1142/S0217751X10050007

@article{436e82ba7ecb44c09465b61be98a5adf,

title = "New features of diffracted channeling radiation from electrons in Si and Lif crystals",

abstract = "It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect [5-7].",

author = "Korotchenko, {K. B.} and Pivovarov, {Yu L.} and Tukhfatullin, {T. A.}",

year = "2010",

month = "6",

day = "1",

doi = "10.1142/S0217751X10050007",

language = "English",

volume = "25",

pages = "157--164",

journal = "International Journal of Modern Physics A",

issn = "0217-751X",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "SUPPL. 1",

}

TY - JOUR

T1 - New features of diffracted channeling radiation from electrons in Si and Lif crystals

AU - Korotchenko, K. B.

AU - Pivovarov, Yu L.

AU - Tukhfatullin, T. A.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect [5-7].

AB - It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect [5-7].

UR - http://www.scopus.com/inward/record.url?scp=77954351407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954351407&partnerID=8YFLogxK

U2 - 10.1142/S0217751X10050007

DO - 10.1142/S0217751X10050007

M3 - Article

AN - SCOPUS:77954351407

VL - 25

SP - 157

EP - 164

JO - International Journal of Modern Physics A

JF - International Journal of Modern Physics A

SN - 0217-751X

IS - SUPPL. 1

ER -

Доступ к документу

10.1142/S0217751X10050007