New features of diffracted channeling radiation from electrons in Si and Lif crystals

K. B. Korotchenko, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журнала › Статья

Аннотация

It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect [5-7].

Язык оригинала	Английский
Страницы (с-по)	157-164
Число страниц	8
Журнал	International Journal of Modern Physics A
Том	25
Номер выпуска	SUPPL. 1
DOI	https://doi.org/10.1142/S0217751X10050007
Состояние	Опубликовано - 1 июн 2010

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Nuclear and High Energy Physics
Astronomy and Astrophysics

Доступ к документу

10.1142/S0217751X10050007

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Цитировать

Korotchenko, K. B., Pivovarov, Y. L., & Tukhfatullin, T. A. (2010). New features of diffracted channeling radiation from electrons in Si and Lif crystals. International Journal of Modern Physics A, 25(SUPPL. 1), 157-164. https://doi.org/10.1142/S0217751X10050007

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