Monolithic growth of ultrathin Ge nanowires on Si(001)

J. J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. O. Rezaev, C. Mickel, B. Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, O. G. Schmidt

Результат исследований: Материалы для журналаСтатья

65 Цитирования (Scopus)

Аннотация

Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.

Язык оригиналаАнглийский
Номер статьи085502
ЖурналPhysical Review Letters
Том109
Номер выпуска8
DOI
СостояниеОпубликовано - 23 авг 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Цитировать

    Zhang, J. J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R. O., Mickel, C., Rellinghaus, B., Miglio, L., De Franceschi, S., Rastelli, A., & Schmidt, O. G. (2012). Monolithic growth of ultrathin Ge nanowires on Si(001). Physical Review Letters, 109(8), [085502]. https://doi.org/10.1103/PhysRevLett.109.085502