Molecular beam epitaxy growth of a planar p-n junction on a (111) A GaAs substrate using the amphoteric property of silicon dopant

G. Galiev, V. Kaminskii, D. Milovzorov, L. Velihovskii, V. Mokerov

Результат исследования: Материалы для журналаСтатья

6 Цитирования (Scopus)


Molecular beam epitaxy has been applied to grow planar and only Si-doped epitaxial n- and p-type layers on GaAs substrates with (111)A orientation. The morphology of the n-layers is significantly better than that of the p-layers. However, in both cases, the photoluminescence spectra and carrier mobility show no significant difference from the same characteristics of (100) crystal samples. Planar p-n junctions have also been grown. Depending on the structure of the layers, the I-V characteristics have a form which is typical of conventional or inverted diodes.

Язык оригиналаАнглийский
Страницы (с... по...)120-123
Количество страниц4
ЖурналSemiconductor Science and Technology
Номер выпуска2
Статус публикацииОпубликовано - фев 2002


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics