Выдержка
Thin films of tin oxide were deposited on the glass substrates at a room temperature using reactive magnetron sputtering. The ratio between O2/Ar and the discharge voltage is maintained in such a mode when the deposited films are dielectrics. After the deposition, the films were irradiated with an argon ions beam. The modification of the optical and electrical properties of the films depending on the irradiation time was studied. Optical properties of the films were analyzed in the range of 300-1100 nm using photometry and structural X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It was found that the modification in the transmittance was correlated with modifications in the meaning of surface resistance. The dielectrics films SnO2 with increasing exposure time became conductive and then the electrical resistance decreased and reached a minimum at 13.2 seconds. Then resistance films began to increase.
| Язык оригинала | Английский |
|---|---|
| Номер статьи | 012077 |
| Журнал | Journal of Physics: Conference Series |
| Том | 830 |
| Номер выпуска | 1 |
| DOI | |
| Состояние | Опубликовано - 4 мая 2017 |
| Событие | 5th International Congress on Energy Fluxes and Radiation Effects 2016, EFRE 2016 - Tomsk, Российская Федерация Продолжительность: 2 окт 2016 → 7 окт 2016 |
Отпечаток
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Modification of optical and electrical properties of SnO2 under the influence of argon ion beam. / Umnov, S.; Asainov, O.; Temenkov, V.
В: Journal of Physics: Conference Series, Том 830, № 1, 012077, 04.05.2017.Результат исследований: Материалы для журнала › Статья
}
TY - JOUR
T1 - Modification of optical and electrical properties of SnO2 under the influence of argon ion beam
AU - Umnov, S.
AU - Asainov, O.
AU - Temenkov, V.
PY - 2017/5/4
Y1 - 2017/5/4
N2 - Thin films of tin oxide were deposited on the glass substrates at a room temperature using reactive magnetron sputtering. The ratio between O2/Ar and the discharge voltage is maintained in such a mode when the deposited films are dielectrics. After the deposition, the films were irradiated with an argon ions beam. The modification of the optical and electrical properties of the films depending on the irradiation time was studied. Optical properties of the films were analyzed in the range of 300-1100 nm using photometry and structural X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It was found that the modification in the transmittance was correlated with modifications in the meaning of surface resistance. The dielectrics films SnO2 with increasing exposure time became conductive and then the electrical resistance decreased and reached a minimum at 13.2 seconds. Then resistance films began to increase.
AB - Thin films of tin oxide were deposited on the glass substrates at a room temperature using reactive magnetron sputtering. The ratio between O2/Ar and the discharge voltage is maintained in such a mode when the deposited films are dielectrics. After the deposition, the films were irradiated with an argon ions beam. The modification of the optical and electrical properties of the films depending on the irradiation time was studied. Optical properties of the films were analyzed in the range of 300-1100 nm using photometry and structural X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It was found that the modification in the transmittance was correlated with modifications in the meaning of surface resistance. The dielectrics films SnO2 with increasing exposure time became conductive and then the electrical resistance decreased and reached a minimum at 13.2 seconds. Then resistance films began to increase.
UR - http://www.scopus.com/inward/record.url?scp=85020006216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020006216&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/830/1/012077
DO - 10.1088/1742-6596/830/1/012077
M3 - Article
AN - SCOPUS:85020006216
VL - 830
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012077
ER -