Modeling of the impurity distribution obtained by ion implantation

V. G. Abdrashitov, V. V. Ryzhov

Отделение материаловедения

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

Язык оригинала	Английский
Страницы (с-по)	410-422
Число страниц	13
Журнал	Russian Physics Journal
Том	37
Номер выпуска	5
DOI	https://doi.org/10.1007/BF00560112
Состояние	Опубликовано - мая 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1007/BF00560112

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