Modeling of the impurity distribution obtained by ion implantation

V. G. Abdrashitov, V. V. Ryzhov

Результат исследований: Материалы для журнала › Статья

Выдержка

Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

Язык оригиналаАнглийский
Страницы (с-по)410-422
Число страниц13
ЖурналRussian Physics Journal
Том37
Номер выпуска5
DOI
СостояниеОпубликовано - мая 1994

Отпечаток

ion implantation
impurities
implantation
ion beams
dosage

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Modeling of the impurity distribution obtained by ion implantation. / Abdrashitov, V. G.; Ryzhov, V. V.

В: Russian Physics Journal, Том 37, № 5, 05.1994, стр. 410-422.

Результат исследований: Материалы для журнала › Статья

Abdrashitov, VG & Ryzhov, VV 1994, 'Modeling of the impurity distribution obtained by ion implantation', Russian Physics Journal, том. 37, № 5, стр. 410-422. https://doi.org/10.1007/BF00560112
Abdrashitov VG, Ryzhov VV. Modeling of the impurity distribution obtained by ion implantation. Russian Physics Journal. 1994 Май;37(5):410-422. https://doi.org/10.1007/BF00560112
Abdrashitov, V. G. ; Ryzhov, V. V. / Modeling of the impurity distribution obtained by ion implantation. В: Russian Physics Journal. 1994 ; Том 37, № 5. стр. 410-422.
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