Modeling of the impurity distribution obtained by ion implantation

Аннотация

Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

Язык оригинала	Английский
Страницы (с-по)	410-422
Число страниц	13
Журнал	Russian Physics Journal
Том	37
Номер выпуска	5
DOI	https://doi.org/10.1007/BF00560112
Состояние	Опубликовано - мая 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1007/BF00560112

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Цитировать

Abdrashitov, V. G., & Ryzhov, V. V. (1994). Modeling of the impurity distribution obtained by ion implantation. Russian Physics Journal, 37(5), 410-422. https://doi.org/10.1007/BF00560112

@article{2b426d1262524848a147824426bea1f1,

title = "Modeling of the impurity distribution obtained by ion implantation",

abstract = "Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.",

author = "Abdrashitov, {V. G.} and Ryzhov, {V. V.}",

year = "1994",

month = may,

doi = "10.1007/BF00560112",

language = "English",

volume = "37",

pages = "410--422",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "5",

}

TY - JOUR

T1 - Modeling of the impurity distribution obtained by ion implantation

AU - Abdrashitov, V. G.

AU - Ryzhov, V. V.

PY - 1994/5

Y1 - 1994/5

N2 - Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

AB - Models and a suite of programs (TRION, PIRSON, CHAPS, and DYCOD) that make it possible to calculate the impurity distribution for any implantation dose in a target with arbitrary composition are described. Test calculations for each program showed that the results are in good agreement with experimental data and with theoretical calculations performed by other authors. The suite of programs is intended for the development of the physical principals of ion-beam technologies.

UR - http://www.scopus.com/inward/record.url?scp=34249763188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249763188&partnerID=8YFLogxK

U2 - 10.1007/BF00560112

DO - 10.1007/BF00560112

M3 - Article

AN - SCOPUS:34249763188

VL - 37

SP - 410

EP - 422

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 5

ER -