Modeling of dynamics of big size ZnGeP2 Crystal growth by vertical bridgman technique

M. Philippov, Y. Babushkin, S. Efimov, S. Zamyatin, V. Rudnicki, A. Trofimov, A. Gribenyukov

Результат исследований: Материалы для журналаСтатья

1 Цитирования (Scopus)

Аннотация

The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given. Trustworthiness of the results modeling is achieved by means of creation of the mathematical model taking into account the particularities of the installation as well as the changes in installation work volume during crystallization. Temperature field changes during crystal growth by numerical technique were examined. It is demonstrated that growth container moving has a significant impact on temperature field in work volume and crystallization isotherm local position. Thus, the actual crystal growth rate differs from the nominal velocity of growth container moving. The data received as a result of modelling should be taken into account in new equipment designing, crystallization process control system development and crystal growth experiments planning.

Язык оригиналаАнглийский
Страницы (с-по)283-290
Число страниц8
ЖурналBulletin of the Polish Academy of Sciences: Technical Sciences
Том66
Номер выпуска3
DOI
СостояниеОпубликовано - 1 июн 2018

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Information Systems
  • Engineering(all)
  • Computer Networks and Communications
  • Artificial Intelligence

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