Modeling of carbon penetration into silicon structure under the action of pulsed high-intensity ion beam

Nurken E. Aktaev, Gennady E. Remnev

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Аннотация

The action of high-intensity beam of carbon ions on a silicon sample is studied by means of a numerical modelling revealing formation of the in-depth carbon concentration profile in crystal lattice of silicon. We investigated three ways of the profile forming: short-pulsed ion implantation, recoil atoms mechanism and thermal diffusion of the carbon atoms adsorbed on the silicon surface. The latter is the result of high temperature gradient associated with the action of pulsed high-intensity ion beam. It is argued that the diffusion process plays the major role in forming of the concentration profile in the pre-surface layer of a silicon sample.

Язык оригиналаАнглийский
Страницы (с-по)54-57
Число страниц4
ЖурналSurface and Coatings Technology
Том306
DOI
СостояниеОпубликовано - 25 ноя 2016

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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  • Виды деятельности

    • 1 Участие в конференции

    International Conference on Surface Modification of Materials by Ion Beams

    Nurken Erbolatovich Aktaev (Участник), & Igor Borisovich Stepanov (Участник)

    23 ноя 201527 ноя 2015

    Деятельность: Участие в конференции

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