MOCVD growth and study of magnetic Co films

S. I. Dorovskikh, R. R. Hairullin, S. V. Sysoev, V. V. Kriventsov, A. V. Panin, Y. V. Shubin, N. B. Morozova, N. V. Gelfond, S. V. Korenev

Результат исследований: Материалы для журналаСтатья

1 Цитирования (Scopus)

Аннотация

The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

Язык оригиналаАнглийский
Страницы (с-по)8-14
Число страниц7
ЖурналSurface Engineering
Том32
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2016

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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  • Цитировать

    Dorovskikh, S. I., Hairullin, R. R., Sysoev, S. V., Kriventsov, V. V., Panin, A. V., Shubin, Y. V., Morozova, N. B., Gelfond, N. V., & Korenev, S. V. (2016). MOCVD growth and study of magnetic Co films. Surface Engineering, 32(1), 8-14. https://doi.org/10.1179/1743294414Y.0000000424