Аннотация
The diffusion and activation of ion-implanted P and B in Si under high-power (>107 W/cm2) pulsed ion-beam irradiation with a pulse duration of 10-8 to 10-7 s were studied. The volume absorption of C+ and H+ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irradiation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) × 1021 cm-3 are formed. The impurity redistribution under pulsed treatment was computer simulated, and the thermal stability of the formed layers was assessed.
| Язык оригинала | Английский |
|---|---|
| Страницы (с... по...) | 946-950 |
| Количество страниц | 5 |
| Журнал | Inorganic Materials |
| Том | 34 |
| Номер выпуска | 9 |
| Статус публикации | Опубликовано - сен 1998 |
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ASJC Scopus subject areas
- Materials Science(all)
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Bayazitov, R. M., Antonova, L. K., Khaibullin, I. B., Latypov, R. G., & Remnev, G. E. (1998). Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. Inorganic Materials, 34(9), 946-950.