Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation

R. M. Bayazitov, L. Kh Antonova, I. B. Khaibullin, R. G. Latypov, G. E. Remnev

Исследовательская школа физики высокоэнергетических процессов

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

The diffusion and activation of ion-implanted P and B in Si under high-power (>10⁷ W/cm²) pulsed ion-beam irradiation with a pulse duration of 10^-8 to 10^-7 s were studied. The volume absorption of C⁺ and H⁺ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irradiation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) × 10²¹ cm^-3 are formed. The impurity redistribution under pulsed treatment was computer simulated, and the thermal stability of the formed layers was assessed.

Язык оригинала	Английский
Страницы (с-по)	946-950
Число страниц	5
Журнал	Inorganic Materials
Том	34
Номер выпуска	9
Состояние	Опубликовано - сен 1998

ASJC Scopus subject areas

Materials Science(all)

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Melting and Recrystallization of Implanted Si under High-Energy Ion-Beam Irradiation. / Bayazitov, R. M.; Antonova, L. Kh; Khaibullin, I. B.; Latypov, R. G.; Remnev, G. E.

В: Inorganic Materials, Том 34, № 9, 09.1998, стр. 946-950.

Результат исследований: Материалы для журнала › Статья › рецензирование

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AU - Bayazitov, R. M.

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AU - Khaibullin, I. B.

AU - Latypov, R. G.

AU - Remnev, G. E.

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AB - The diffusion and activation of ion-implanted P and B in Si under high-power (>107 W/cm2) pulsed ion-beam irradiation with a pulse duration of 10-8 to 10-7 s were studied. The volume absorption of C+ and H+ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irradiation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) × 1021 cm-3 are formed. The impurity redistribution under pulsed treatment was computer simulated, and the thermal stability of the formed layers was assessed.

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