Аннотация
The diffusion and activation of ion-implanted P and B in Si under high-power (>107 W/cm2) pulsed ion-beam irradiation with a pulse duration of 10-8 to 10-7 s were studied. The volume absorption of C+ and H+ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irradiation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) × 1021 cm-3 are formed. The impurity redistribution under pulsed treatment was computer simulated, and the thermal stability of the formed layers was assessed.
Язык оригинала | Английский |
---|---|
Страницы (с-по) | 946-950 |
Число страниц | 5 |
Журнал | Inorganic Materials |
Том | 34 |
Номер выпуска | 9 |
Состояние | Опубликовано - сен 1998 |
ASJC Scopus subject areas
- Materials Science(all)