Melt nonstoichiometry and defect structure of ZnGeP2 crystals

G. A. Verozubova, A. Yu Trofimov, E. M. Trukhanov, A. V. Kolesnikov, A. O. Okunev, Yu F. Ivanov, P. R J Galtier, S. A. Said Hassani

Результат исследований: Материалы для журналаСтатьярецензирование

9 Цитирования (Scopus)

Аннотация

The defect structure of ZnGeP2 crystals grown from a melt by the vertical Bridgman method has been investigated. A deviation of the melt composition from stoichiometric leads to the formation of striations and the inclusions of other phases which are observed as structures (chains) oriented parallel to the growth axis. According to the microanalysis data, the inclusion composition corresponds to a mixture of ZnGeP2, Zn3P 2, and Ge. Nanoinclusions of germanium phosphide are detected by transmission electron microscopy. X-ray topography reveals defects of four types. The main defects in the central part of an ingot are related to the composition fluctuations, and the newly formed dislocations are basically single ones. Most dislocations are formed at the crystal periphery.

Язык оригиналаАнглийский
Страницы (с-по)65-70
Число страниц6
ЖурналCrystallography Reports
Том55
Номер выпуска1
DOI
СостояниеОпубликовано - янв 2010

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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