Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Выдержка

It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.

Язык оригиналаАнглийский
Название основной публикацииProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOI
СостояниеОпубликовано - 2012
Событие2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Российская Федерация
Продолжительность: 18 сен 201221 сен 2012

Другое

Другое2012 7th International Forum on Strategic Technology, IFOST 2012
СтранаРоссийская Федерация
ГородTomsk
Период18.9.1221.9.12

Отпечаток

Vacuum
Plasmas
Substrates
Plasma
Regularity
Substrate
Sputtering
Tungsten
Electrostatics
Ions
Metals

ASJC Scopus subject areas

  • Management of Technology and Innovation

Цитировать

Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma. / Ryabchikov, A. I.; Sivin, Denis Olegovich; Bumagina, A. I.

Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012. 6357762.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Ryabchikov, AI, Sivin, DO & Bumagina, AI 2012, Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma. в Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012., 6357762, Tomsk, Российская Федерация, 18.9.12. https://doi.org/10.1109/IFOST.2012.6357762
@inproceedings{aa329c09b1e04e53b694c4c0b3a02bef,
title = "Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma",
abstract = "It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10{\%} of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.",
keywords = "high-frequency short-pulse negative bias potencial, macroparticle, surface density, vacuum-arc plasma",
author = "Ryabchikov, {A. I.} and Sivin, {Denis Olegovich} and Bumagina, {A. I.}",
year = "2012",
doi = "10.1109/IFOST.2012.6357762",
language = "English",
isbn = "9781467317702",
booktitle = "Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012",

}

TY - GEN

T1 - Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma

AU - Ryabchikov, A. I.

AU - Sivin, Denis Olegovich

AU - Bumagina, A. I.

PY - 2012

Y1 - 2012

N2 - It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.

AB - It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.

KW - high-frequency short-pulse negative bias potencial

KW - macroparticle

KW - surface density

KW - vacuum-arc plasma

UR - http://www.scopus.com/inward/record.url?scp=84871830961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871830961&partnerID=8YFLogxK

U2 - 10.1109/IFOST.2012.6357762

DO - 10.1109/IFOST.2012.6357762

M3 - Conference contribution

AN - SCOPUS:84871830961

SN - 9781467317702

BT - Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012

ER -