Measuring complex for studying galvanomagnetic phenomena in multigrafene layers

Dmitriy Starov, Denis Kutuzov, Oleg Stukach, Alexey Osovskiy

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Аннотация

Graphene synthesis technology on substrates is promising, as is compatible with existing CMOS-Technology. Knowledge about how to affect the substrate of choice for structural and electronic properties of graphene is important and opens up new opportunities in targeted influence on the properties of this unique material. Specialized measuring system was established to measure the galvanomagnetic characteristics of substrates multigraphene. Its structure and the measurement results are presented in the paper. For surface resistivity measurements we obtained samples were higher than that of natural graphite, but much lower than for samples of colloidal suspensions.

Язык оригиналаАнглийский
Название основной публикации2017 International Siberian Conference on Control and Communications, SIBCON 2017 - Proceedings
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)9781509010806
DOI
СостояниеОпубликовано - 31 июл 2017
Событие2017 International Siberian Conference on Control and Communications, SIBCON 2017 - Astana, Казахстан
Продолжительность: 29 июн 201730 июн 2017

Конференция

Конференция2017 International Siberian Conference on Control and Communications, SIBCON 2017
СтранаКазахстан
ГородAstana
Период29.6.1730.6.17

    Fingerprint

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Energy Engineering and Power Technology
  • Control and Optimization
  • Electrical and Electronic Engineering
  • Mechanical Engineering

Цитировать

Starov, D., Kutuzov, D., Stukach, O., & Osovskiy, A. (2017). Measuring complex for studying galvanomagnetic phenomena in multigrafene layers. В 2017 International Siberian Conference on Control and Communications, SIBCON 2017 - Proceedings [7998529] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2017.7998529