Measurements of parametric X-rays from relativistic electrons in silicon crystals

Yu N. Adishchev, A. N. Didenko, V. V. Mun, G. A. Pleshkov, A. P. Potylitsin, V. K. Tomchakov, S. R. Uglov, S. A. Vorobiev

Результат исследований: Материалы для журналаСтатья

24 Цитирования (Scopus)

Выдержка

Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

Язык оригиналаАнглийский
Страницы (с-по)49-55
Число страниц7
ЖурналNuclear Inst. and Methods in Physics Research, B
Том21
Номер выпуска1-4
DOI
СостояниеОпубликовано - 1987

Отпечаток

Silicon
X rays
Crystals
Electrons
Angular distribution
silicon
crystals
electrons
x rays
angular distribution
Single crystals
single crystals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Цитировать

Adishchev, Y. N., Didenko, A. N., Mun, V. V., Pleshkov, G. A., Potylitsin, A. P., Tomchakov, V. K., ... Vorobiev, S. A. (1987). Measurements of parametric X-rays from relativistic electrons in silicon crystals. Nuclear Inst. and Methods in Physics Research, B, 21(1-4), 49-55. https://doi.org/10.1016/0168-583X(87)90138-8

Measurements of parametric X-rays from relativistic electrons in silicon crystals. / Adishchev, Yu N.; Didenko, A. N.; Mun, V. V.; Pleshkov, G. A.; Potylitsin, A. P.; Tomchakov, V. K.; Uglov, S. R.; Vorobiev, S. A.

В: Nuclear Inst. and Methods in Physics Research, B, Том 21, № 1-4, 1987, стр. 49-55.

Результат исследований: Материалы для журналаСтатья

Adishchev, Yu N. ; Didenko, A. N. ; Mun, V. V. ; Pleshkov, G. A. ; Potylitsin, A. P. ; Tomchakov, V. K. ; Uglov, S. R. ; Vorobiev, S. A. / Measurements of parametric X-rays from relativistic electrons in silicon crystals. В: Nuclear Inst. and Methods in Physics Research, B. 1987 ; Том 21, № 1-4. стр. 49-55.
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T1 - Measurements of parametric X-rays from relativistic electrons in silicon crystals

AU - Adishchev, Yu N.

AU - Didenko, A. N.

AU - Mun, V. V.

AU - Pleshkov, G. A.

AU - Potylitsin, A. P.

AU - Tomchakov, V. K.

AU - Uglov, S. R.

AU - Vorobiev, S. A.

PY - 1987

Y1 - 1987

N2 - Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

AB - Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

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