Maximum switching frequency choice for IGBT used in ZCS mode

S. Lefebvre, F. Forest, J. P. Chante

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

4 Цитирования (Scopus)

Выдержка

In the laboratory we have developed quasi-resonant converters using Z.C.S.(Zero Current Switching) mode. In these converters, operating at medium power and frequency range ( a few KW and about 100 KHz), we used the IGBT (Insulated Gate Bipolar Transistor) as a resonant thyristor. The experiment shows a frequency limit: higher frequencies lead to component failure by thermal instability for Punch-Through IGBT. We show that the frequency limitation is due to a phenomenon occurring in the bipolar transistor part of the IGBT: The charges injected into the component during the conduction phase have not all disappeared by recombination when the voltage is applied to the components. We have studies the variation of these charges and of the losses versus the temperature of the component in order to explain the thermal instability. The results allow us to predict the maximum working frequency of the IGBT in ZCS mode, while avoiding failure of the studied component. The results are discussed and an IGBT, included in a forward resonant converter, has been experimentally studied to check the results. First, we show the different behaviors of Punch-Through and Non-Punch-Through components. Thermal instability is impossible with NPT components. Such a study is shown to be the most efficient way of choosing the best adapted component to high frequency applications.

Язык оригиналаАнглийский
Название основной публикацииMaterials and Devices
Редакторы Anon
ИздательPubl by IEE
Страницы356-361
Число страниц6
Издание377
ISBN (печатное издание)0852965842
СостояниеОпубликовано - 1 дек 1993
Опубликовано для внешнего пользованияДа
СобытиеProceedings of the 5th European Conference on Power Electronics and Applications - Brighton, Engl
Продолжительность: 13 сен 199316 сен 1993

Серия публикаций

НазваниеIEE Conference Publication
Номер377
Том2
ISSN (печатное издание)0537-9987

Конференция

КонференцияProceedings of the 5th European Conference on Power Electronics and Applications
ГородBrighton, Engl
Период13.9.9316.9.93

Отпечаток

Insulated gate bipolar transistors (IGBT)
Switching frequency
Bipolar transistors
Thyristors
Zero current switching
Electric potential
Hot Temperature
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Lefebvre, S., Forest, F., & Chante, J. P. (1993). Maximum switching frequency choice for IGBT used in ZCS mode. В Anon (Ред.), Materials and Devices (377 ред., стр. 356-361). (IEE Conference Publication; Том 2, № 377). Publ by IEE.

Maximum switching frequency choice for IGBT used in ZCS mode. / Lefebvre, S.; Forest, F.; Chante, J. P.

Materials and Devices. ред. / Anon. 377. ред. Publ by IEE, 1993. стр. 356-361 (IEE Conference Publication; Том 2, № 377).

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Lefebvre, S, Forest, F & Chante, JP 1993, Maximum switching frequency choice for IGBT used in ZCS mode. в Anon (ред.), Materials and Devices. 377 ред., IEE Conference Publication, № 377, том. 2, Publ by IEE, стр. 356-361, Proceedings of the 5th European Conference on Power Electronics and Applications, Brighton, Engl, 13.9.93.
Lefebvre S, Forest F, Chante JP. Maximum switching frequency choice for IGBT used in ZCS mode. В Anon, редактор, Materials and Devices. 377 ред. Publ by IEE. 1993. стр. 356-361. (IEE Conference Publication; 377).
Lefebvre, S. ; Forest, F. ; Chante, J. P. / Maximum switching frequency choice for IGBT used in ZCS mode. Materials and Devices. редактор / Anon. 377. ред. Publ by IEE, 1993. стр. 356-361 (IEE Conference Publication; 377).
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