Magnetic properties of Co-Fe ultra-thin films by electroless deposition

C. Borioli, S. Franz, M. Bestetti, M. Cantoni, P. L. Cavallotti

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Аннотация

The deposition kmetics and the magnetic properties of Co x-Fe1-x (30<x<40) soft magnetic films (< 10000 Å) obtained by electroless deposition were investigated. In particular, the effect of film thickness on easy-axis coercivity was studied. Three organic additives were used: sodium saccharin, saccharin and maltose. In the initial stages of the deposition process, maltose greatly inhibits Co-Fe deposition if compared to sodium saccharin and saccharin Néel coefficient calculated from the log-log plot of easy-axis coercivity (Hc) vs. film thickness in the range above 600 Å are - 0.23 and -0 3 for sodium saccharin and saccharin, respectively. On the other hand, Co-Fe ultra-thin films deposited from maltose-containing baths showed no dependence of Hc on films thickness in the same range. The uniaxial magnetic anisotropy induced during deposition was also investigated. copyright The Electrochemical Society.

Язык оригиналаАнглийский
Название основной публикацииECS Transactions - 9th International Symposium on Magnetic Materials, Processes and Devices
Страницы81-90
Число страниц10
Том3
Издание25
DOI
СостояниеОпубликовано - 2007
Опубликовано для внешнего пользованияДа
Событие9th International Symposium on Magnetic Materials, Processes and Devices - 210th ECS Meeting - Cancun, Мексика
Продолжительность: 31 окт 20062 ноя 2006

Конференция

Конференция9th International Symposium on Magnetic Materials, Processes and Devices - 210th ECS Meeting
СтранаМексика
ГородCancun
Период31.10.062.11.06

ASJC Scopus subject areas

  • Engineering(all)

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  • Цитировать

    Borioli, C., Franz, S., Bestetti, M., Cantoni, M., & Cavallotti, P. L. (2007). Magnetic properties of Co-Fe ultra-thin films by electroless deposition. В ECS Transactions - 9th International Symposium on Magnetic Materials, Processes and Devices (25 ред., Том 3, стр. 81-90) https://doi.org/10.1149/1.2753241