Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam

V. I. Oleshko, S. G. Gorina, V. I. Korepanov, V. M. Lisitsyn, I. A. Prudaev, O. P. Tolbanov

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Выдержка

The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.

Язык оригиналаАнглийский
Страницы (с-по)62-66
Число страниц5
ЖурналRussian Physics Journal
Том56
Номер выпуска1
DOI
СостояниеОпубликовано - 1 июн 2013

Отпечаток

high current
light emitting diodes
electron beams
luminescence
thin films
excitation
halos
sapphire
flux density
diodes
quantum wells
thresholds

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. / Oleshko, V. I.; Gorina, S. G.; Korepanov, V. I.; Lisitsyn, V. M.; Prudaev, I. A.; Tolbanov, O. P.

В: Russian Physics Journal, Том 56, № 1, 01.06.2013, стр. 62-66.

Результат исследований: Материалы для журналаСтатья

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AU - Oleshko, V. I.

AU - Gorina, S. G.

AU - Korepanov, V. I.

AU - Lisitsyn, V. M.

AU - Prudaev, I. A.

AU - Tolbanov, O. P.

PY - 2013/6/1

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AB - The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.

KW - gallium nitride

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