Low energy, high intensity metal ion implantation method for deep dopant containing layer formation

Результат исследований: Материалы для журналаСтатья

10 Цитирования (Scopus)

Аннотация

This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 μs and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2 × 1021 ion/сm2. The results of the element composition of the modified layer were also investigated.

Язык оригиналаАнглийский
Страницы (с-по)123-128
Число страниц6
ЖурналSurface and Coatings Technology
Том355
DOI
СостояниеОпубликовано - 15 дек 2018

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Подробные сведения о темах исследования «Low energy, high intensity metal ion implantation method for deep dopant containing layer formation». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать