Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C<sup>+</sup> ion beam

Аннотация

This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30 at.%) was irradiated by a high-intense pulsed C⁺ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C⁺ ions with energy E_i = 200 keV, ion current density i_s = 7 A/cm², pulse duration t_p = 110 ns and radiation dose 2 MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings.

Язык оригинала	Английский
Страницы (с-по)	65-67
Число страниц	3
Журнал	Vacuum
Том	158
DOI	https://doi.org/10.1016/j.vacuum.2018.09.022
Состояние	Опубликовано - 1 дек 2018

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Доступ к документу

10.1016/j.vacuum.2018.09.022

Fingerprint Подробные сведения о темах исследования «Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C<sup>+</sup> ion beam». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Remnev, G., Tarbokov, V., Pavlov, S., Konusov, F., Zenkin, S., & Musil, J. (2018). Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C⁺ ion beam. Vacuum, 158, 65-67. https://doi.org/10.1016/j.vacuum.2018.09.022

@article{decb4c815c0e4572948f9b56d111d67b,

title = "Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C+ ion beam",

abstract = "This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30 at.%) was irradiated by a high-intense pulsed C+ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C+ ions with energy Ei = 200 keV, ion current density is = 7 A/cm2, pulse duration tp = 110 ns and radiation dose 2 MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings.",

keywords = "Al-Si-N coating, Ion beam, Irradiation, Light transmittance, Magnetron sputtering",

author = "G. Remnev and V. Tarbokov and S. Pavlov and F. Konusov and S. Zenkin and J. Musil",

year = "2018",

month = dec,

day = "1",

doi = "10.1016/j.vacuum.2018.09.022",

language = "English",

volume = "158",

pages = "65--67",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C+ ion beam

AU - Remnev, G.

AU - Tarbokov, V.

AU - Pavlov, S.

AU - Konusov, F.

AU - Zenkin, S.

AU - Musil, J.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30 at.%) was irradiated by a high-intense pulsed C+ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C+ ions with energy Ei = 200 keV, ion current density is = 7 A/cm2, pulse duration tp = 110 ns and radiation dose 2 MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings.

AB - This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30 at.%) was irradiated by a high-intense pulsed C+ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C+ ions with energy Ei = 200 keV, ion current density is = 7 A/cm2, pulse duration tp = 110 ns and radiation dose 2 MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings.

KW - Al-Si-N coating

KW - Ion beam

KW - Irradiation

KW - Light transmittance

KW - Magnetron sputtering

UR - http://www.scopus.com/inward/record.url?scp=85053772542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053772542&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2018.09.022

DO - 10.1016/j.vacuum.2018.09.022

M3 - Article

AN - SCOPUS:85053772542

VL - 158

SP - 65

EP - 67

JO - Vacuum

JF - Vacuum

SN - 0042-207X

ER -

Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C+ ion beam

Аннотация

ASJC Scopus subject areas

Доступ к документу

Цитировать

Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C⁺ ion beam