Аннотация
The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.
Язык оригинала | Английский |
---|---|
Название основной публикации | Sov Phys Semicond |
Страницы | 935-937 |
Число страниц | 3 |
Том | 11 |
Издание | 8 |
Состояние | Опубликовано - авг 1977 |
ASJC Scopus subject areas
- Engineering(all)