INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD.

K. P. Aref'ev, S. A. Vorob'ev, A. N. Grishin, V. N. Klimov, A. T. Shaposhnikov, G. I. Etin, A. A. Tsio

Отделение математики и информатики

Результат исследований: Материалы для книги/типы отчетов › Глава

Аннотация

The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.

Язык оригинала	Английский
Название основной публикации	Sov Phys Semicond
Страницы	935-937
Число страниц	3
Том	11
Издание	8
Состояние	Опубликовано - авг 1977

ASJC Scopus subject areas

Engineering(all)

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INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD. / Aref'ev, K. P.; Vorob'ev, S. A.; Grishin, A. N.; Klimov, V. N.; Shaposhnikov, A. T.; Etin, G. I.; Tsio, A. A.

Sov Phys Semicond. Том 11 8. ред. 1977. стр. 935-937.

Результат исследований: Материалы для книги/типы отчетов › Глава

@inbook{f777bcc6942e4bc0abd4b0d11270a46d,

title = "INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD.",

abstract = "The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.",

author = "Aref'ev, {K. P.} and Vorob'ev, {S. A.} and Grishin, {A. N.} and Klimov, {V. N.} and Shaposhnikov, {A. T.} and Etin, {G. I.} and Tsio, {A. A.}",

year = "1977",

month = aug,

language = "English",

volume = "11",

pages = "935--937",

booktitle = "Sov Phys Semicond",

edition = "8",

}

TY - CHAP

T1 - INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD.

AU - Aref'ev, K. P.

AU - Vorob'ev, S. A.

AU - Grishin, A. N.

AU - Klimov, V. N.

AU - Shaposhnikov, A. T.

AU - Etin, G. I.

AU - Tsio, A. A.

PY - 1977/8

Y1 - 1977/8

N2 - The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.

AB - The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.

UR - http://www.scopus.com/inward/record.url?scp=0017524675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017524675&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0017524675

VL - 11

SP - 935

EP - 937

BT - Sov Phys Semicond

ER -