Аннотация
The positron annihilation method was used in a determination of the momentum distribution of the valence electrons of silicon impurities in gallium arsenide and in Al//xGa//1// minus //xAs solid solutions. The impurity atoms were in singly and doubly ionized states in the GaAs lattice. Positronium states were observed near structure defects in Al//xGa//1// minus //xAs:Si solid solutions.
| Язык оригинала | Английский |
|---|---|
| Название основной публикации | Sov Phys Semicond |
| Страницы | 935-937 |
| Число страниц | 3 |
| Том | 11 |
| Издание | 8 |
| Состояние | Опубликовано - авг 1977 |
ASJC Scopus subject areas
- Engineering(all)
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Цитировать
Aref'ev, K. P., Vorob'ev, S. A., Grishin, A. N., Klimov, V. N., Shaposhnikov, A. T., Etin, G. I., & Tsio, A. A. (1977). INVESTIGATION OF THE CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON ANNIHILATION METHOD. В Sov Phys Semicond (8 ред., Том 11, стр. 935-937)