INVESTIGATION OF QUANTUM STATES OF FAST ELECTRONS UNDER PLANAR CHANNELING IN SILICON CRYSTALS.

V. I. Gridnev, V. V. Kaplin, V. G. Khlabutin, E. I. Rozum, S. A. Vorobiev

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Аннотация

The angular distributions of (1. 87 to 5. 7)Mev electrons channeled in 2 mu m Si crystals along (100), (110), and (111) atomic planes are measured. The half-width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a 'critical energy' under planar channeling of electrons is found and investigated.

Язык оригиналаАнглийский
Страницы (с-по)49-65
Число страниц17
ЖурналPhysica Status Solidi (B) Basic Research
Том142
Номер выпуска1
СостояниеОпубликовано - июл 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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