Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

15 Цитирования (Scopus)

Аннотация

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

Язык оригиналаАнглийский
Название основной публикации2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOI
СостояниеОпубликовано - 17 дек 2013
Опубликовано для внешнего пользованияДа
Событие2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, Франция
Продолжительность: 2 сен 20136 сен 2013

Серия публикаций

Название2013 15th European Conference on Power Electronics and Applications, EPE 2013

Конференция

Конференция2013 15th European Conference on Power Electronics and Applications, EPE 2013
СтранаФранция
ГородLille
Период2.9.136.9.13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology
  • Electrical and Electronic Engineering

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  • Цитировать

    Othman, Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A., & Bouzourene, A. (2013). Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. В 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634665] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634665