Inverse thermal model of temperature-to-power mapping for GaN systems

Shuangfeng Zhang, Eric Laboure, Denis Labrousse, Stéphane Lefebvre

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Выдержка

This paper deals with the problem of measurement of the losses in Power GaN chips due to almost impossibility to measure the current under the penalty of adding parasitic inductances incompatible with the switching speeds of these components. For this purpose, this paper investigates the steady-state inverse heat conduction model (IHCM) developed from thermal simulations. The main objective is to derive the power dissipation in a GaN chip mounted on or embedded in a PCB from the surface temperature measured by infrared thermography or thermal sensors. In this problem, the power devices losses are the solutions of the inverse problem of the temperature-to-power mapping. IHCM here is based on simple observations from real PCB structures with GaN chip embedded in PCB substrates. The error of the resultant power map with thermal noises is minimized by Least-Square Optimization, which transforms the direct inverse problem into a constrained optimization problem.

Язык оригиналаАнглийский
Название основной публикацииPCIM Europe Conference Proceedings
РедакторыAchim Scharf
ИздательMesago PCIM GmbH
Страницы939-943
Число страниц5
Издание225809
ISBN (печатное издание)9783800746460
СостояниеОпубликовано - 1 янв 2018
Опубликовано для внешнего пользованияДа
СобытиеInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018 - Nuremberg, Германия
Продолжительность: 5 июн 20187 июн 2018

Серия публикаций

НазваниеPCIM Europe Conference Proceedings
Номер225809
ISSN (электронное издание)2191-3358

Конференция

КонференцияInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018
СтранаГермания
ГородNuremberg
Период5.6.187.6.18

Отпечаток

Polychlorinated biphenyls
Inverse problems
Heat conduction
Thermal noise
Constrained optimization
Inductance
Temperature
Energy dissipation
Sensors
Substrates
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Цитировать

Zhang, S., Laboure, E., Labrousse, D., & Lefebvre, S. (2018). Inverse thermal model of temperature-to-power mapping for GaN systems. В A. Scharf (Ред.), PCIM Europe Conference Proceedings (225809 ред., стр. 939-943). (PCIM Europe Conference Proceedings; № 225809). Mesago PCIM GmbH.

Inverse thermal model of temperature-to-power mapping for GaN systems. / Zhang, Shuangfeng; Laboure, Eric; Labrousse, Denis; Lefebvre, Stéphane.

PCIM Europe Conference Proceedings. ред. / Achim Scharf. 225809. ред. Mesago PCIM GmbH, 2018. стр. 939-943 (PCIM Europe Conference Proceedings; № 225809).

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Zhang, S, Laboure, E, Labrousse, D & Lefebvre, S 2018, Inverse thermal model of temperature-to-power mapping for GaN systems. в A Scharf (ред.), PCIM Europe Conference Proceedings. 225809 ред., PCIM Europe Conference Proceedings, № 225809, Mesago PCIM GmbH, стр. 939-943, Nuremberg, Германия, 5.6.18.
Zhang S, Laboure E, Labrousse D, Lefebvre S. Inverse thermal model of temperature-to-power mapping for GaN systems. В Scharf A, редактор, PCIM Europe Conference Proceedings. 225809 ред. Mesago PCIM GmbH. 2018. стр. 939-943. (PCIM Europe Conference Proceedings; 225809).
Zhang, Shuangfeng ; Laboure, Eric ; Labrousse, Denis ; Lefebvre, Stéphane. / Inverse thermal model of temperature-to-power mapping for GaN systems. PCIM Europe Conference Proceedings. редактор / Achim Scharf. 225809. ред. Mesago PCIM GmbH, 2018. стр. 939-943 (PCIM Europe Conference Proceedings; 225809).
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