Intervalley electron scattering by phonons in (GaAs)m(AlAs)n(001) ultrathin superlattices

S. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev

Результат исследований: Материалы для журналаСтатьярецензирование

3 Цитирования (Scopus)

Аннотация

The electron scattering by short-wavelength and long-wavelength phonons in (GaAs)m(AlAs)n(001) superlattices with ultrathin layers (n, m = 1, 2, 3) has been investigated using the pseudopotential method and the phenomenological model of bonding forces. The deformation potentials have been found for intervalley electron transitions in the conduction bands of the superlattices and solid solutions of the corresponding compositions. It has been shown that, owing to the localization of the wave functions in the quantum wells Γ, L, and X, the intensity of intervalley electron transitions in the superlattices, as a whole, is higher than that of similar transitions in the solid solutions. As the content of light Al atoms in the superlattices increases, the deformation potentials monotonically increase for the X-X transitions and decrease for the L-L and X-L transitions. The potentials of the Γ-X and Γ-L transitions change nonmonotonically depending on the layer thickness due to the pronounced quantum-well effects in the deep Γ quantum wells of GaAs. The deformation potentials averaged over phonons and related valleys in the superlattices are close to the corresponding potentials in the solid solutions.

Язык оригиналаАнглийский
Страницы (с-по)1606-1614
Число страниц9
ЖурналPhysics of the Solid State
Том52
Номер выпуска8
DOI
СостояниеОпубликовано - 2010

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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