Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon

Результат исследований: Материалы для журналаСтатья

1 цитирование (Scopus)

Выдержка

The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.

Язык оригиналаАнглийский
Страницы (с-по)1168-1173
Число страниц6
ЖурналJournal of Surface Investigation
Том8
Номер выпуска6
DOI
СостояниеОпубликовано - 5 дек 2014

Отпечаток

Polysilicon
Ion implantation
Vacuum
Ions
Photoconductivity
Thermal effects
Annealing
Hot Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Цитировать

Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.; Pavlov, Sergey Khonstantinovich.

В: Journal of Surface Investigation, Том 8, № 6, 05.12.2014, стр. 1168-1173.

Результат исследований: Материалы для журналаСтатья

@article{345a4925abf74f558c03afc9100ba744,
title = "Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon",
abstract = "The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.",
author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Remnev, {G. E.} and Pavlov, {Sergey Khonstantinovich}",
year = "2014",
month = "12",
day = "5",
doi = "10.1134/S1027451014060068",
language = "English",
volume = "8",
pages = "1168--1173",
journal = "Journal of Surface Investigation",
issn = "1027-4510",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

TY - JOUR

T1 - Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Remnev, G. E.

AU - Pavlov, Sergey Khonstantinovich

PY - 2014/12/5

Y1 - 2014/12/5

N2 - The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.

AB - The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.

UR - http://www.scopus.com/inward/record.url?scp=84914144770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84914144770&partnerID=8YFLogxK

U2 - 10.1134/S1027451014060068

DO - 10.1134/S1027451014060068

M3 - Article

AN - SCOPUS:84914144770

VL - 8

SP - 1168

EP - 1173

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 6

ER -