Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon

Результат исследований: Материалы для журналаСтатья

1 Цитирования (Scopus)

Аннотация

The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.

Язык оригиналаАнглийский
Страницы (с-по)1168-1173
Число страниц6
ЖурналJournal of Surface Investigation
Том8
Номер выпуска6
DOI
СостояниеОпубликовано - 5 дек 2014

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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