Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT

N. A. Torkhov, A. V. Gradoboev, M. M. Mihalitskiy

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 Цитирования (Scopus)

Аннотация

Obtained results show, that used modes of positron annealing of low-frequency (1-3 GHz) HEMT lead to rising of power and current gains (G max and H21 respectively). The value of cutoff frequency Ft does not decrease, and the Fmax raised. According to S-parameters of low-frequency (1-3 GHz) HEMT at high-frequency (20-40 GHz) range, one can see parameters degradation of the used construction. To improve microwave HEMT in 20-40 GHz range, obviously, it is necessary to use high-frequency construction of heteroepitaxial structure and other modes of positron annealing.

Язык оригиналаАнглийский
Название основной публикацииCriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Страницы647-648
Число страниц2
СостояниеОпубликовано - 2012
Событие2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012 - Sevastopol, Crimea, Украина
Продолжительность: 10 сен 201214 сен 2012

Другое

Другое2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012
СтранаУкраина
ГородSevastopol, Crimea
Период10.9.1214.9.12

ASJC Scopus subject areas

  • Computer Networks and Communications

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