Influence of electric field on the photoluminescence of silicon nanocrystals

E. N. Vandyshev, K. S. Zhuravlev, A. M. Gilinsky, V. M. Lisitsyn, W. Skorupa

Результат исследований: Материалы для журналаСтатья

3 Цитирования (Scopus)

Аннотация

We studied the effect of electric field generated on photoluminescence (PL) of silicon nanocrystals embedded in SiO2 films. We show that the application of electric field generated by means of surface acoustic waves (SAW) results in an increase of the PL intensity of nanocrystal photoluminescence by as much as 10% at a field amplitude of 12 kV/cm at temperatures below 15 K. At temperatures above 20 K the PL intensity decreases as the electric field is applied. The results are discussed within the frame of the self-trapped exciton model.

Язык оригиналаАнглийский
Страницы (с-по)297-300
Число страниц4
ЖурналThin Solid Films
Том493
Номер выпуска1-2
DOI
СостояниеОпубликовано - 22 дек 2005

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Fingerprint Подробные сведения о темах исследования «Influence of electric field on the photoluminescence of silicon nanocrystals». Вместе они формируют уникальный семантический отпечаток (fingerprint).

  • Цитировать