INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY.

S. N. Artemenko, A. A. Kal'fa, Sh M. Kogan, V. I. Sidorov

Научно-исследовательская лаборатория СВЧ-технологии

Результат исследований: Материалы для книги/типы отчетов › Глава

Аннотация

An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.

Язык оригинала	Английский
Название основной публикации	Sov Phys Semicond
Страницы	1405-1408
Число страниц	4
Том	8
Издание	11
Состояние	Опубликовано - мая 1975

ASJC Scopus subject areas

Engineering(all)

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INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. / Artemenko, S. N.; Kal'fa, A. A.; Kogan, Sh M.; Sidorov, V. I.

Sov Phys Semicond. Том 8 11. ред. 1975. стр. 1405-1408.

Результат исследований: Материалы для книги/типы отчетов › Глава

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