INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

A. P. Mamontov, V. V. Peshev, I. P. Chernov

Результат исследований: Материалы для журналаСтатья

Выдержка

The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

Язык оригиналаАнглийский
Страницы (с-по)1371-1372
Число страниц2
ЖурналSoviet physics. Semiconductors
Том16
Номер выпуска12
СостояниеОпубликовано - дек 1982

Отпечаток

Gallium arsenide
Electric space charge
Electric fields
Annealing
Radiation
Defects
Deep level transient spectroscopy
Gamma rays
Capacitance
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE. / Mamontov, A. P.; Peshev, V. V.; Chernov, I. P.

В: Soviet physics. Semiconductors, Том 16, № 12, 12.1982, стр. 1371-1372.

Результат исследований: Материалы для журналаСтатья

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abstract = "The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.",
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