INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

A. P. Mamontov, V. V. Peshev, I. P. Chernov

Результат исследования: Материалы для журналаСтатья

Аннотация

The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

Язык оригиналаАнглийский
Страницы (с... по...)1371-1372
Количество страниц2
ЖурналSoviet physics. Semiconductors
Том16
Номер выпуска12
Статус публикацииОпубликовано - дек 1982

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ASJC Scopus subject areas

  • Engineering(all)

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