High-rate deposition of thin films by high-power ion beam

I. F. Isakov, G. E. Remnev, A. N. Zakutayev

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

3 Цитирования (Scopus)

Аннотация

The results on the deposition of thin elemental and compound films by means of a high-power ion beam are presented. The TEMP accelerator (an ion energy of 300 keV, a current density of 100-150 A/cm 2 on a target, a pulse repetition rate of 0.3 Hz, a vacuum of 10 4 Torr) was used. The thin metallic (Cd, Zn and other) and stoichiometric Y 1-Ba 2-Cu 3-O 7-x films were obtained. The film growth rate was (0.3-1)·10 8 Å/s. The results show (i) the metallic films were continuous with very smooth surface morphology when they were examined by scanning electron microscopy, and (ii) transmission electron diffraction and transmission electron microscopy indicated small grain polycrystalline metallic films, and (iii) by Rutherford backward scattering and Auger electron spectroscopy it is shown that the stoichiometric Y 1-Ba 2-Cu 3-O 7-x films can be deposited at relatively low substrate temperature 300-450C.

Язык оригиналаАнглийский
Название основной публикацииBeams 92 - Proceedings of the 9th International Conference on High-Power Particle Beams
Страницы1966-1970
Число страниц5
Том3
СостояниеОпубликовано - 1992
Событие9th International Conference on High-Power Particle Beams, Beams 92 - Washington, DC, Соединенные Штаты Америки
Продолжительность: 25 мая 209229 мая 2092

Другое

Другое9th International Conference on High-Power Particle Beams, Beams 92
СтранаСоединенные Штаты Америки
ГородWashington, DC
Период25.5.9229.5.92

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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  • Цитировать

    Isakov, I. F., Remnev, G. E., & Zakutayev, A. N. (1992). High-rate deposition of thin films by high-power ion beam. В Beams 92 - Proceedings of the 9th International Conference on High-Power Particle Beams (Том 3, стр. 1966-1970). [6306848]