High-rate deposition of thin films by high-intensity pulsed ion beam evaporation

A. N. Zakoutayev, G. E. Remnev, Yu F. Ivanov, M. S. Arteyev, V. M. Matvienko, A. V. Potyomkin

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Выдержка

A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.

Язык оригиналаАнглийский
Название основной публикацииMaterials Research Society Symposium - Proceedings
ИздательMaterials Research Society
Страницы317-322
Число страниц6
Том388
СостояниеОпубликовано - 1995
СобытиеProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Продолжительность: 17 апр 199521 апр 1995

Другое

ДругоеProceedings of the 1995 MRS Spring Meeting
ГородSan Francisco, CA, USA
Период17.4.9521.4.95

Отпечаток

Carbon films
Deposition rates
Ion beams
Evaporation
Metals
Thin films
Pulse repetition rate
Diamond
Ablation
Electron diffraction
Melting point
Laser pulses
Diamonds
Current density
Deposits
Spectroscopy
Transmission electron microscopy
Plasmas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Цитировать

Zakoutayev, A. N., Remnev, G. E., Ivanov, Y. F., Arteyev, M. S., Matvienko, V. M., & Potyomkin, A. V. (1995). High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. В Materials Research Society Symposium - Proceedings (Том 388, стр. 317-322). Materials Research Society.

High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. / Zakoutayev, A. N.; Remnev, G. E.; Ivanov, Yu F.; Arteyev, M. S.; Matvienko, V. M.; Potyomkin, A. V.

Materials Research Society Symposium - Proceedings. Том 388 Materials Research Society, 1995. стр. 317-322.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Zakoutayev, AN, Remnev, GE, Ivanov, YF, Arteyev, MS, Matvienko, VM & Potyomkin, AV 1995, High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. в Materials Research Society Symposium - Proceedings. том. 388, Materials Research Society, стр. 317-322, San Francisco, CA, USA, 17.4.95.
Zakoutayev AN, Remnev GE, Ivanov YF, Arteyev MS, Matvienko VM, Potyomkin AV. High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. В Materials Research Society Symposium - Proceedings. Том 388. Materials Research Society. 1995. стр. 317-322
Zakoutayev, A. N. ; Remnev, G. E. ; Ivanov, Yu F. ; Arteyev, M. S. ; Matvienko, V. M. ; Potyomkin, A. V. / High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. Materials Research Society Symposium - Proceedings. Том 388 Materials Research Society, 1995. стр. 317-322
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