High-rate deposition of thin films by high-intensity pulsed ion beam evaporation

A. N. Zakoutayev, G. E. Remnev, Yu F. Ivanov, M. S. Arteyev, V. M. Matvienko, A. V. Potyomkin

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции


A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.

Язык оригиналаАнглийский
Название основной публикацииMaterials Research Society Symposium - Proceedings
ИздательMaterials Research Society
Число страниц6
СостояниеОпубликовано - 1995
СобытиеProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Продолжительность: 17 апр 199521 апр 1995


ДругоеProceedings of the 1995 MRS Spring Meeting
ГородSan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Zakoutayev, A. N., Remnev, G. E., Ivanov, Y. F., Arteyev, M. S., Matvienko, V. M., & Potyomkin, A. V. (1995). High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. В Materials Research Society Symposium - Proceedings (Том 388, стр. 317-322). Materials Research Society.