High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures

A. V. Voitsekhovskii, A. P. Kokhanenko, Yu A. Denisov, D. A. Oucherenko, G. E. Remnev, M. S. Opekunov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Выдержка

Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

Язык оригиналаАнглийский
Название основной публикацииProceedings of SPIE - The International Society for Optical Engineering
Страницы375-379
Число страниц5
Том3182
DOI
СостояниеОпубликовано - 1997
СобытиеMaterial Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Украина
Продолжительность: 30 сен 199630 сен 1996

Другое

ДругоеMaterial Science and Material Properties for Infrared Optoelectronics
СтранаУкраина
ГородUzhgorod
Период30.9.9630.9.96

Отпечаток

Ion Implantation
Electron Beam
Ion implantation
High Power
ion implantation
Electron beams
implantation
electron beams
Electron
Ions
Electrons
electron energy
pulses
ion distribution
Hall Effect
current density
Current density
Hall effect
Energy
Irradiation

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

Voitsekhovskii, A. V., Kokhanenko, A. P., Denisov, Y. A., Oucherenko, D. A., Remnev, G. E., & Opekunov, M. S. (1997). High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures В Proceedings of SPIE - The International Society for Optical Engineering (Том 3182, стр. 375-379) https://doi.org/10.1117/12.280460

High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures . / Voitsekhovskii, A. V.; Kokhanenko, A. P.; Denisov, Yu A.; Oucherenko, D. A.; Remnev, G. E.; Opekunov, M. S.

Proceedings of SPIE - The International Society for Optical Engineering. Том 3182 1997. стр. 375-379.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Voitsekhovskii, AV, Kokhanenko, AP, Denisov, YA, Oucherenko, DA, Remnev, GE & Opekunov, MS 1997, High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures в Proceedings of SPIE - The International Society for Optical Engineering. том. 3182, стр. 375-379, Uzhgorod, Украина, 30.9.96. https://doi.org/10.1117/12.280460
Voitsekhovskii AV, Kokhanenko AP, Denisov YA, Oucherenko DA, Remnev GE, Opekunov MS. High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures В Proceedings of SPIE - The International Society for Optical Engineering. Том 3182. 1997. стр. 375-379 https://doi.org/10.1117/12.280460
Voitsekhovskii, A. V. ; Kokhanenko, A. P. ; Denisov, Yu A. ; Oucherenko, D. A. ; Remnev, G. E. ; Opekunov, M. S. / High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures Proceedings of SPIE - The International Society for Optical Engineering. Том 3182 1997. стр. 375-379
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AU - Voitsekhovskii, A. V.

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AU - Denisov, Yu A.

AU - Oucherenko, D. A.

AU - Remnev, G. E.

AU - Opekunov, M. S.

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AB - Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

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