High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures

A. V. Voitsekhovskii, A. P. Kokhanenko, Yu A. Denisov, D. A. Oucherenko, G. E. Remnev, M. S. Opekunov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

Язык оригиналаАнглийский
Название основной публикацииProceedings of SPIE - The International Society for Optical Engineering
Страницы375-379
Число страниц5
Том3182
DOI
СостояниеОпубликовано - 1997
СобытиеMaterial Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Украина
Продолжительность: 30 сен 199630 сен 1996

Другое

ДругоеMaterial Science and Material Properties for Infrared Optoelectronics
СтранаУкраина
ГородUzhgorod
Период30.9.9630.9.96

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Цитировать

    Voitsekhovskii, A. V., Kokhanenko, A. P., Denisov, Y. A., Oucherenko, D. A., Remnev, G. E., & Opekunov, M. S. (1997). High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures В Proceedings of SPIE - The International Society for Optical Engineering (Том 3182, стр. 375-379) https://doi.org/10.1117/12.280460