Аннотация
An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.
| Язык оригинала | Английский |
|---|---|
| Название основной публикации | 91 IEEE Int Conf Plasma Sci |
| Место публикации | Piscataway, NJ, United States |
| Издатель | Publ by IEEE |
| Страницы | 216 |
| Число страниц | 1 |
| ISBN (печатное издание) | 0780301471 |
| Состояние | Опубликовано - 1991 |
| Событие | 1991 IEEE International Conference on Plasma Science - Williamsburg, VA, USA Продолжительность: 3 июн 1991 → 5 июн 1991 |
Другое
| Другое | 1991 IEEE International Conference on Plasma Science |
|---|---|
| Город | Williamsburg, VA, USA |
| Период | 3.6.91 → 5.6.91 |
ASJC Scopus subject areas
- Engineering(all)
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Цитировать
Bystritskii, V. M., Kharlov, A. V., & Mytnikov, A. V. (1991). High power ion beam generation in the plasma-filled diode. В 91 IEEE Int Conf Plasma Sci (стр. 216). Publ by IEEE.