High power ion beam generation in the plasma-filled diode

V. M. Bystritskii, A. V. Kharlov, A. V. Mytnikov

Отделение электроэнергетики и электротехники

Результат исследований: Материалы для книги/типы отчетов › Материалы для конференции

Аннотация

An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.

Язык оригинала	Английский
Название основной публикации	91 IEEE Int Conf Plasma Sci
Место публикации	Piscataway, NJ, United States
Издатель	Publ by IEEE
Страницы	216
Число страниц	1
ISBN (печатное издание)	0780301471
Состояние	Опубликовано - 1991
Событие	1991 IEEE International Conference on Plasma Science - Williamsburg, VA, USA Продолжительность: 3 июн 1991 → 5 июн 1991

Другое

Другое	1991 IEEE International Conference on Plasma Science
Город	Williamsburg, VA, USA
Период	3.6.91 → 5.6.91

ASJC Scopus subject areas

Engineering(all)

Fingerprint Подробные сведения о темах исследования «High power ion beam generation in the plasma-filled diode». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@inproceedings{ceb97fc307e1417c9bd992dcfd7ac285,

title = "High power ion beam generation in the plasma-filled diode",

abstract = "An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.",

author = "Bystritskii, {V. M.} and Kharlov, {A. V.} and Mytnikov, {A. V.}",

year = "1991",

language = "English",

isbn = "0780301471",

pages = "216",

booktitle = "91 IEEE Int Conf Plasma Sci",

publisher = "Publ by IEEE",

note = "1991 IEEE International Conference on Plasma Science ; Conference date: 03-06-1991 Through 05-06-1991",

}

TY - GEN

T1 - High power ion beam generation in the plasma-filled diode

AU - Bystritskii, V. M.

AU - Kharlov, A. V.

AU - Mytnikov, A. V.

PY - 1991

Y1 - 1991

N2 - An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.

AB - An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.

UR - http://www.scopus.com/inward/record.url?scp=0026396496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026396496&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026396496

SN - 0780301471

SP - 216

BT - 91 IEEE Int Conf Plasma Sci

PB - Publ by IEEE

CY - Piscataway, NJ, United States

T2 - 1991 IEEE International Conference on Plasma Science

Y2 - 3 June 1991 through 5 June 1991

ER -