High power ion beam generation in the plasma-filled diode

V. M. Bystritskii, A. V. Kharlov, A. V. Mytnikov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.

Язык оригиналаАнглийский
Название основной публикации91 IEEE Int Conf Plasma Sci
Место публикацииPiscataway, NJ, United States
ИздательPubl by IEEE
Страницы216
Число страниц1
ISBN (печатное издание)0780301471
СостояниеОпубликовано - 1991
Событие1991 IEEE International Conference on Plasma Science - Williamsburg, VA, USA
Продолжительность: 3 июн 19915 июн 1991

Другое

Другое1991 IEEE International Conference on Plasma Science
ГородWilliamsburg, VA, USA
Период3.6.915.6.91

ASJC Scopus subject areas

  • Engineering(all)

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  • Цитировать

    Bystritskii, V. M., Kharlov, A. V., & Mytnikov, A. V. (1991). High power ion beam generation in the plasma-filled diode. В 91 IEEE Int Conf Plasma Sci (стр. 216). Publ by IEEE.