High-frequency short-pulsed metal plasma-immersion ion implantation using filtered DC vacuum-arc plasma (part two)

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции


An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for dielectric samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2 ÷ 4.4)x105 p.p.s. and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined.

Язык оригиналаАнглийский
Название основной публикацииProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
СостояниеОпубликовано - 2012
Событие2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Российская Федерация
Продолжительность: 18 сен 201221 сен 2012


Другое2012 7th International Forum on Strategic Technology, IFOST 2012
СтранаРоссийская Федерация


ASJC Scopus subject areas

  • Management of Technology and Innovation